RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs