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型号	功能描述	生产厂家企业	LOGO
MRF21010	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21010LR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21010LR1	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF21010LSR1	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF21010LSR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21030D	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21030LR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030LR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul	Motorola 摩托罗拉	Motorola
MRF21030LR5	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030LSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul	Motorola 摩托罗拉	Motorola
MRF21030R3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21030SR3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21045	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21045	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21045LSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21060	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21060	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060LR3	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060LSR3	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060R3	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21060SR3	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21085	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085R3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085SR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21090	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21090	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090R3	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21090R3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090R3_06	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090SR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090SR3	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21010	RF Power Field Effect Transistors 文件：383.37 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21010LR1	RF Power Field Effect Transistors 文件：383.37 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21010LR1_06	RF Power Field Effect Transistors 文件：383.37 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21010LR5	封装/外壳：NI-360 包装：卷带（TR）描述：FET RF 65V 2.17GHZ NI-360 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
MRF21010LSR1	封装/外壳：NI-360S 包装：卷带（TR）描述：FET RF 65V 2.17GHZ NI-360S 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
MRF21010LSR1	RF Power Field Effect Transistors 文件：383.37 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21010SR1	2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET	ETC 知名厂家	ETC
MRF21030D	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS	ETC 知名厂家	ETC
MRF21030LR3	2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET	ETC 知名厂家	ETC
MRF21045LR3	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：479.17 Kbytes Page：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LR3_08	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：479.17 Kbytes Page：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LSR3	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：479.17 Kbytes Page：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：197.85 Kbytes Page：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3_08	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：197.85 Kbytes Page：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
210	AUTO-DIP짰 Switch Automatically Insertable, Wave Solderable, Board Washable DIP Switch 文件：602.94 Kbytes Page：2 Pages	CTS 西迪斯	CTS
210	Direct replacement for T3 쩌 Midget Edison Screw E10 文件：290.6 Kbytes Page：5 Pages	MARL	MARL
210	Thru-Bolts and Mounting Brackets 文件：286.71 Kbytes Page：3 Pages	OHMITE	OHMITE
210	M8 Female 3 Pin Field Attachable 文件：178.33 Kbytes Page：2 Pages	ALPHAWIRE	ALPHAWIRE
210	Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages	ABBATRON	ABBATRON

MRF210产品属性

类型
描述
型号
MRF210
制造商
MOTOROLA
制造商全称
Motorola, Inc
功能描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF210供应商更多...

更新时间：2025-12-27 16:16:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	MRF21030R5	FSL	25+	SMD	2789	全新原装自家现货!价格优势!	询价
深圳市科恒伟业电子有限公司	MRF21030S	MOTOROLA/摩托罗拉	2450+		6540	原装现货或订发货1-2周	询价
深圳市百诺芯科技有限公司	MRF21045L	MOTOROLA/摩托罗拉	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市富利微电子科技有限公司	MRF21045L	FREESCALE	24+	TO-63	30000	房间原装现货特价热卖,有单详谈	询价
深圳市威雅利发展有限公司	MRF21030S	恩XP		高频管	16	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市创新迹电子有限公司	MRF21030S	高频管	22+	02+	20000	公司只做原装品质保障	询价
深圳市一线半导体有限公司	MRF21045	FRESSCAL	24+	SMD	25		询价
深圳市明嘉莱科技有限公司	MRF21045	FREE	24+	NA	990000	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	MRF21045LR3	Freescale		NA	5500	一级代理原装正品假一罚十价格优势长期供货	询价
千层芯半导体(深圳)有限公司	MRF21045LR3	Freescale	24+	SMD	5500	长期供应原装现货实单可谈	询价

MRF210芯片相关品牌

MRF210规格书下载地址

MRF210参数引脚图相关

MRF210数据表相关新闻

MRF166W原装现货特价出
MRF166W原装现货特价出
2024-12-11
MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26
MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30
MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30

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MRF210产品属性

MRF210供应商更多...

MRF210芯片相关品牌

MRF210规格书下载地址

MRF210参数引脚图相关

MRF210数据表相关新闻

MRF166W原装现货特价出

MRF448只有原装，现货，现货，现货！

MRF18060A

MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S

MRF571

MRF572

DdatasheetPDF页码索引