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丝印代码：NCE3009S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =9A RDS(ON)

丝印代码：NCE3015S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =15A RDS(ON)

丝印代码：NCE3030Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3030Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Pow

丝印代码：NCE3040Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3040Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

丝印代码：NCE3045G；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

丝印代码：NCE3065G；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectificatio

丝印代码：NCE3065K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =65A RDS(ON)

丝印代码：NCE3065Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3065Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

丝印代码：NCE3068Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3068Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =30V,ID =6

丝印代码：NCE3080IA；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON)

丝印代码：NCE3085K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3085K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =85A RDS(ON) =4.2 mΩ @ VGS=10V (Typ) RDS(ON) =7.0mΩ @ VGS=4.5V (Typ) ● High density cel

丝印代码：NCE3090K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

丝印代码：NCE3095G；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

丝印代码：NCE3095K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3095K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =95A RDS(ON)

丝印代码：NCE30H10BG；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

丝印代码：NCE30H10BK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON)

丝印代码：NCE30H11BG；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga

丝印代码：NCE30H11BK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi

丝印代码：NCE30H11K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)

丝印代码：NCE30H12AK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H12AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON)

丝印代码：NCE30H14K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON)

丝印代码：NCE30H15B；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON)

丝印代码：NCE30H15BG；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features

丝印代码：NCE30H15BK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON)

丝印代码：NCE30H28；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H28 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =280A RDS(ON)

丝印代码：NCE30H29D；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =290A RDS(ON)

丝印代码：NCE30H33LL；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H33LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

丝印代码：NCE30ND35Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30ND35Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON)

丝印代码：NCE30NP07S；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON)

丝印代码：NCE30NP1812K；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =30V,ID =18A RDS(ON)

丝印代码：NCE30NP1812Q；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON)

丝印代码：NCE30P06J；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -30V,ID = -6.5A RDS(ON

丝印代码：NCE30P10S；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON)

丝印代码：NCE30P12BS；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P12BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON)

丝印代码：NCE30P15AS；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A RDS(ON)

丝印代码：NCE30P16Q；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -16A RDS(ON)

丝印代码：NCE30P20Q；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON)

丝印代码：NCE30P25BQ；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25BQ uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management General Features ● VDS = -30V,ID = -25A RDS(O

丝印代码：NCE30P25Q；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -25A RDS(ON)

丝印代码：NCE30P28Q；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -30V,ID = -28A RDS(ON)

丝印代码：NCE30P30G；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON)

丝印代码：NCE30P30K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

丝印代码：NCE30P30L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

丝印代码：NCE30P40K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -40A RDS(ON) =7.8mΩ @ VGS= -10V (Typ) RDS(ON) =11.5mΩ @ VGS= -4.5V (Ty

丝印代码：NCE30P55K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON)

丝印代码：NCE30P55L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON)

丝印代码：NCE30P60G；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P60G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-60A RDS(ON)

丝印代码：NCE30P85K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P85K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -85A RDS(ON) =5.3mΩ @ VGS= -10V (Typ) RDS(ON) =7.6mΩ @ VGS= -4.5V (Typ

丝印代码：NCE30TD120UT；1200V, 30A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

丝印代码：NCE30TD60B；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD60BD；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD60BF；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD60BP；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD60BT；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD65BD；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD65BP；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TD65BT；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE30TH60BP；600V, 30A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat） ⚫

丝印代码：NCE3025Q；LCE N-Channel Enhancement Mode Power MOSFET

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