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NCE3

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NCE3008N

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008Nusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3008XM

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication.GeneralFeatures ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3008Y

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008Yusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3009S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3009Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=9A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3013J

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3013Jusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=13A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3015S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3015Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=15A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3030Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3030Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●HardSwitchedandHighFrequencyCircuits ●UninterruptiblePow

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3040Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3040Qusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3045G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3045Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3065G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectificatio

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3065K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3065Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Qusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3080IA

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3080IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3090K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3090Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=90A RDS(ON)=3.4mΩ(typical)@VGS=10V RDS(ON)=6.9mΩ(typical)@VGS=4.5V ●Highdensity

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3095G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3095K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=95A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H11BG

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.3mΩ(typical)@VGS=10V RDS(ON)=3.8mΩ(typical)@VGS=4.5V ●Excellentga

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H11BK

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.7mΩ(typical)@VGS=10V RDS(ON)=3.9mΩ(typical)@VGS=4.5V ●Highdensi

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H11K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H12AK

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H12AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=120A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H14K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H14Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=140A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H15B

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H15Busesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H15BK

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H15BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H29D

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H29Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=290A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30H33LL

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H33LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P06J

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P10S

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P10Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-10A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P12BS

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P12BSusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas4.5V.Thisdeviceissuitableforuseas aloadswitchorinPWMapplications.GeneralFeatures ●VDS=-30V,ID=-12A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P15AS

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P15ASusesadvancedtrenchtechnologyto provideexcellentRDS(ON),Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-15A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P16Q

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P16Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-16A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P20Q

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P20Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications.GeneralFeatures ●VDS=-30V,ID=-20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P25BQ

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P25BQusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitableforuse asaloadswitchorinPWMapplications.Application ●PWMapplications ●Loadswitch ●Powermanagement GeneralFeatures ●VDS=-30V,ID=-25A RDS(O

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P25Q

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P25Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-25A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P28Q

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P28Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaloadswitchor powermanagement.Application ●Powermanagement●Loadswitch GeneralFeatures ●VDS=-30V,ID=-28A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P30G

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaload switchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P30K

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P30L

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Lusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P55K

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P55Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.GeneralFeatures ●VDS=-30V,ID=-55A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P55L

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P55Lusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-55A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE30P60G

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P60Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-30V,ID=-60A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3400

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3400E

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3400Eusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication.ItisESD protested. GeneralFeatures ●VDS=30

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3400X

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3400Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.1A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3400XY

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3400XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.1A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3401

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3401A

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3401AY

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3401AY-P

P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDs=-30V,ID=-4.2A RDS(ON)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
NCE3401BY

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE3401BYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-4.4A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3401E

NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE3401Eusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications.ItisESDprotested.GeneralFeatures ●VDS=-30V,ID=-4.4A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3401Y

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3402

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3402A

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3402B

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3404Y

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3406AN

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3406ANusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=6A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3406N

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3406Nusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=6A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
NCE3407

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
NCE3407A

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI

NCE3产品属性

  • 类型

    描述

  • 型号

    NCE3

  • 制造商

    CIT

  • 制造商全称

    CIT Relay & Switch

  • 功能描述

    CIT SWITCH

NCE3供应商更多...

更新时间：2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
NCE3420
NCE/新洁能
24+
SOT-23
20000
热卖优势现货
询价
深圳市纳艾斯科技有限公司
NCE3018AS
2020+
SOP-8
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市科芯源微电子有限公司
NCE3050K
NCE/新洁能
24+
TO-252
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市金芯世纪电子有限公司
NCE3050K
NCE/新洁能
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
深圳市星辰微电科技有限公司
NCE30TH60BP
NCE新洁能
22+
TO-3P
100000
新结能全线供应,支持终端生产
询价
深圳市中利达电子科技有限公司
NCE3401
NCE
21+
N/A
239701
深圳通
询价
深圳市弘扬芯城科技有限公司
NCE30TD60BP
NCE(无锡新洁能)
23+
TO-220
5000
诚信服务,绝对原装原盘
询价
深圳市纳立科技有限公司
NCE3401
NCE
19+
SOT-23
999999
纳立只做原装正品13590203865
询价
深圳市晨豪科技有限公司
NCE3417
NCE/新洁能
23+
SOT-23
89630
当天发货全新原装现货
询价
深圳市纳睿斯电子科技有限公司
NCE3080K
新洁能
23+
20000
原装现货,可追溯原厂渠道
询价

NCE3芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

NCE3规格书下载地址

NCE3参数引脚图相关

NCE3数据表相关新闻

DdatasheetPDF页码索引

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