Description

The NCE30P60G uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =-30V,ID =-60A

RDS(ON) < 6mΩ @ VGS=-10V

RDS(ON) < 9mΩ @ VGS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Battery and loading switching