Description

The NCE30H11BK uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. General Features

● VDS =30V,ID =110A

RDS(ON) =2.7mΩ (typical) @ VGS=10V

RDS(ON) =3.9mΩ (typical) @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● DC/DC converters

● Synchronous Rectifier