Description

The NCE30H10BK uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =30V,ID =100A

RDS(ON) <4.1mΩ @ VGS=10V (Typ:3.5mΩ)

RDS(ON) <7.0mΩ @ VGS=4.5V (Typ:5.8mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply