| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE30P06J | 丝印代码:NCE30P06J;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -30V,ID = -6.5A RDS(ON | NCEPOWER 新洁能 | ||
NCE30P06J | 12-150V P-Channel Trench MOSFET | NCEPOWER 新洁能 | ||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt | MOTOROLA 摩托罗拉 | |||
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw | INTERSIL |
NCE30P06J产品属性
- 类型
描述
- Product status:
Production
- Package:
DFN2*2
- Polarity:
P
- BVDSS(V):
-30
- ID(A):
-6.5
- VTH(V):
-1.3
- RDS(ON)@10VTyp(mΩ):
24
- RDS(ON)@10VMax(mΩ):
30
- RDS(ON)@4.5VTyp(mΩ):
34
- RDS(ON)@4.5VMax(mΩ):
50
- VGS(th)(V):
±20
- CISS(pF):
520
- QG(nC):
9.2
- PD(W):
2.8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE新洁能 |
25+ |
SOT-23 |
24000 |
原厂原装,价格优势 |
|||
NCE新洁能 |
25+ |
DFN2X2-6L |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE/新洁能 |
25+ |
DNF2*26 |
98192 |
一站式BOM配单 |
|||
NCE新洁能 |
22+ |
DFN2X2-6L |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NCEPOWER |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NCE/新洁能 |
25+ |
SOT-23 |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
无锡新洁能 |
2447 |
SOT-23(SOT-23-3) |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
NCE/新洁能 |
22+ |
DNF2*2-6 |
20000 |
只做原装 |
|||
NCE新洁能 |
25+ |
DFN2X2-6L |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE |
26+ |
To-252 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
NCE30P06J芯片相关品牌
NCE30P06J规格书下载地址
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NCE30TH60BP找NCE代理商上深圳百域芯 NCE30TH60BP NCE30TD60B NCE30TD60BF NCE30TD60BP NCE30TD60BT NCE30TD60BD NCE40TD60T NCE40T60BP NCE40TD60BPF NCE40TD60BT NCE40TD60BP NCE40TH60BP NCE40TH60BPF NCE60TD60BT NCE60TD60BP NCE75TD60T NCE20TD60F NCE20TD60B
2021-7-9
DdatasheetPDF页码索引
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