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型号 功能描述 生产厂家 企业 LOGO 操作
NCE30P06J

丝印代码:NCE30P06J;NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -30V,ID = -6.5A RDS(ON

NCEPOWER

新洁能

NCE30P06J

12-150V P-Channel Trench MOSFET

NCEPOWER

新洁能

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

MOTOROLA

摩托罗拉

30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw

INTERSIL

NCE30P06J产品属性

  • 类型

    描述

  • Product status:

    Production

  • Package:

    DFN2*2

  • Polarity:

    P

  • BVDSS(V):

    -30

  • ID(A):

    -6.5

  • VTH(V):

    -1.3

  • RDS(ON)@10VTyp(mΩ):

    24

  • RDS(ON)@10VMax(mΩ):

    30

  • RDS(ON)@4.5VTyp(mΩ):

    34

  • RDS(ON)@4.5VMax(mΩ):

    50

  • VGS(th)(V):

    ±20

  • CISS(pF):

    520

  • QG(nC):

    9.2

  • PD(W):

    2.8

更新时间:2026-8-4 15:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NCE新洁能
25+
SOT-23
24000
原厂原装,价格优势
NCE新洁能
25+
DFN2X2-6L
100000
新结能全线供应,支持终端生产
NCE/新洁能
25+
DNF2*26
98192
一站式BOM配单
NCE新洁能
22+
DFN2X2-6L
95000
专业配单,原装正品假一罚十,代理渠道价格优
NCEPOWER
24+
SOT-23
9600
原装现货,优势供应,支持实单!
NCE/新洁能
25+
SOT-23
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
无锡新洁能
2447
SOT-23(SOT-23-3)
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
NCE/新洁能
22+
DNF2*2-6
20000
只做原装
NCE新洁能
25+
DFN2X2-6L
100000
新结能全线供应,支持终端生产
NCE
26+
To-252
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

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