Description

The NCE30NP1812K uses advanced trench technology to

provide excellent RDS(ON) and low gate charge . The

complementary MOSFETs may be used to form a level shifted

high side switch, and for a host of other applications.

General Features

● N-Channel

VDS =30V,ID =18A

RDS(ON) < 41mΩ @ VGS=10V

RDS(ON) < 54mΩ @ VGS=4.5V

● P-Channel

VDS =-30V,ID = -12A

RDS(ON) <58mΩ @ VGS=-10V

RDS(ON) < 85mΩ @ VGS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package