NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

12-200V N-Channel Trench MOSFET

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Inst, 1 Pr #16 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 1 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 150V NPLF 90C Dry/Wet SUN RES DIR BUR

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