NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON)

N-Channel 30-V (D-S) MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

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Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Hig

N-Channel Trench Power MOSFET

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3 0 0 - 3 7 5 WAT T L I N E A R

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