丝印代码：NCE30H29D；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =290A RDS(ON)

12-200V N-Channel Trench MOSFET

\n The NCE30H29D uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =30V ,I D =290A\nR DS(ON) < 1.8m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD capabi;