| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE30P55L | NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON) | NCEPOWER 新洁能 |   | |
NCE30P55L | 12-150V P-Channel Trench MOSFET | NCEPOWER 新洁能 | | |
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON) | NCEPOWER 新洁能 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：553.72 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：530.35 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：419.93 Kbytes Page：8 Pages | RECTRON 丽正国际 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
25+ |
TO-251S |
60000 |
全新原装现货特价销售,欢迎来电查询 |
|||
NCE/新洁能 |
24+ |
TO-251S |
100000 |
原装现货 |
|||
NCE新洁能 |
22+ |
TO-251S |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NCE/新洁能 |
2511 |
DFN5X6-8L |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NCE |
25+ |
SOP-8 |
20000 |
原装正品价格优惠,志同道合共谋发展 |
|||
NCE/新洁能 |
19+ |
TO-220 |
3976 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NCE/新洁能 |
24+ |
TO-251(S) |
50000 |
只做原装，欢迎询价，量大价优 |
|||
NCE/新洁能 |
2022+ |
DFN56 |
50000 |
原厂代理 终端免费提供样品 |
|||
NCE/新洁能 |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NK/南科功率 |
2025+ |
DFN5060-8 |
986966 |
国产 |
NCE30P55L芯片相关品牌
NCE30P55L规格书下载地址
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NCE30P55L数据表相关新闻
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NCE30TH60BP找NCE代理商上深圳百域芯 NCE30TH60BP NCE30TD60B NCE30TD60BF NCE30TD60BP NCE30TD60BT NCE30TD60BD NCE40TD60T NCE40T60BP NCE40TD60BPF NCE40TD60BT NCE40TD60BP NCE40TH60BP NCE40TH60BPF NCE60TD60BT NCE60TD60BP NCE75TD60T NCE20TD60F NCE20TD60B
2021-7-9
DdatasheetPDF页码索引
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