丝印代码：NCE3068Q；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3068Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =30V,ID =6

12-200V N-Channel Trench MOSFET

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

0.4??Single Digit Numeric Display Seven Segment, RHDP

Description: The NTE3068 through NTE3071 are 0.4 inch (10.16mm) height single digit displays. The NTE3068 and NTE3069 devices utilize LED chips which are made from GaP on a transparent GaP substrate. The NTE3070 and NTE3071 devices utilize chips which are made from GaAsP on a transparent GaP subs