Description

The NCE30P85K uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge .This

device is well suited for high current load applications.

General Features

● VDS = -30V,ID = -85A

RDS(ON) =5.3mΩ @ VGS= -10V (Typ)

RDS(ON) =7.6mΩ @ VGS= -4.5V (Typ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply