位置：首页 > IC中文资料 > NCE30H11BG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE30H11BG | NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga | NCEPOWER 新洁能 |   | |
NCE30H11BG | 12-200V N-Channel Trench MOSFET | NCEPOWER 新洁能 | | |
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi | NCEPOWER 新洁能 | | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) | NCEPOWER 新洁能 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：377.15 Kbytes Page：7 Pages | NCEPOWER 新洁能 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NCE新洁能 |
21+ |
TO-252 |
32500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NCE |
23+ |
- |
30000 |
华南总代 |
|||
NCE/新洁能 |
25+ |
DFN5X6-8L |
60000 |
全新原装现货特价销售,欢迎来电查询 |
|||
NCE/新洁能 |
21+ |
DFN5X6-8L |
330000 |
百域芯优势 实单必成 可开13点增值税 |
|||
NCE新洁能 |
22+ |
DFN5X6-8L |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NCE新洁能 |
25+ |
TO-252 |
50000 |
原厂原装,价格优势 |
|||
NCE |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NCE/新洁能 |
23+ |
TO-252 |
21661 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
无锡新洁能 |
23+ |
TO-252-2L |
22820 |
原装正品，支持实单 |
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2021-7-5
DdatasheetPDF页码索引
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