丝印代码：NCE30P30K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

12-150V P-Channel Trench MOSFET

The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. • VDS =-30V,ID =-30ARDS(ON) <18mΩ @ VGS=-10VRDS(ON) <30mΩ @ VGS=-4.5V• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellent package for good heat dissipation;

P-Channel 30-V (D-S) MOSFET

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Panels and Panel Accessories

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Panels and Panel Accessories

文件：2.00209 Mbytes Page：16 Pages

Panels and Panel Accessories

文件：2.00209 Mbytes Page：16 Pages

P-Channel Power MOSFET

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