位置:NCE30P40K > NCE30P40K详情

NCE30P40K中文资料

厂家型号

NCE30P40K

丝印代码

NCE30P40K

封装外壳

TO-252-2L

文件大小

734.47Kbytes

页面数量

7

功能描述

NCE P-Channel Enhancement Mode Power MOSFET

数据手册

下载地址一下载地址二

生产厂商

NCEPOWER

NCE30P40K数据手册规格书PDF详情

Description

The NCE30P40K uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge .This

device is well suited for high current load applications.

General Features

● VDS = -30V,ID = -40A

RDS(ON) =7.8mΩ @ VGS= -10V (Typ)

RDS(ON) =11.5mΩ @ VGS= -4.5V (Typ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

更新时间:2026-7-30 12:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NCEPOWER
2511
SOT-23
360000
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只做原装
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24+
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9600
原装现货,优势供应,支持实单!
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25+
SOT23
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一站式BOM配单
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全新原装正品现货,支持订货
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原装认准芯泽盛世!
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10
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