| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE30H11K | NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 |   | |
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：377.15 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE新洁能 |
22+ |
TO-252 |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE新洁能 |
22+ |
TO-252 |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NCE/新洁能 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
NCE/新洁能 |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
NCE新洁能 |
21+ |
T0-220 |
10000 |
全新原装 |
|||
新洁能 |
25+ |
TO-252 |
5000 |
原厂原装,价格优势 |
|||
NCE新洁能 |
23+ |
T0-220 |
10000 |
正规渠道,只有原装! |
|||
NCE/新洁能 |
24+ |
TO-252 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
NCE |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NCE |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
NCE30H11K芯片相关品牌
NCE30H11K规格书下载地址
NCE30H11K参数引脚图相关
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NCE30H11K数据表相关新闻
DdatasheetPDF页码索引
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