2SJ545资料使用说明书日立现货供应价格Hitachi-IC资料网

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型号	功能描述	生产厂家企业	LOGO
2SJ540	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ540	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ540-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ541	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ541	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ541-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ542	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ542	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ542-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ543	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ543	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ543-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ544	Silicon P Channel MOS FET * Low on-resistance R ds(on) = 0.028 Ohm typ. * Low drive current * 4V gate drive devies. * High speed switching.	RENESAS 瑞萨	RENESAS
2SJ544	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ544-E	Silicon P Channel MOS FET * Low on-resistance R ds(on) = 0.028 Ohm typ. * Low drive current * 4V gate drive devies. * High speed switching.	RENESAS 瑞萨	RENESAS
2SJ545	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ545	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ545-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ546	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ546	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ546-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ547	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.16 Ωtyp. • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ547	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ547-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ548	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ548	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ548-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ549	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ549	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ549L	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ549L	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ549L-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ549S	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ549S	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ549STL-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching	RENESAS 瑞萨	RENESAS
2SJ540_15	Silicon P Channel MOS FET 文件：109.56 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ541_15	Silicon P Channel MOS FET 文件：107.74 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ542_15	Silicon P Channel MOS FET 文件：107.45 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ543_15	Silicon P Channel MOS FET 文件：107.86 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ544_15	Silicon P Channel MOS FET 文件：108.01 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ546	P-Channel 60-V (D-S) MOSFET 文件：951.27 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ547_15	Silicon P Channel MOS FET 文件：108.1 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ548_15	Silicon P Channel MOS FET 文件：108.44 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ549(L)/(S)	Silicon P-Channel MOS FET	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ549(L)_15	Silicon P Channel MOS FET 文件：116.92 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SJ549L	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SJ549L	Silicon P Channel MOS FET High Speed Power Switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi

2SJ54产品属性

类型
描述
型号
2SJ54
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon P Channel MOS FET

2SJ54供应商更多...

更新时间：2025-12-25 18:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SJ545	HITACHI/日立	24+	NA/	800	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市富芯乐电子科技有限公司	2SJ545	HIT	24+	NA	4000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市诺美思科技有限公司	2SJ545-E	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市高捷芯城科技有限公司	2SJ545-E	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市拓亿芯电子有限公司	2SJ545	HITACHI/日立	25+	TO-220	9800	全新原装现货,假一赔十	询价
深圳市华斯顿科技有限公司	2SJ545-E	RENESAS	25+23+	New	34749	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市一线半导体有限公司	2SJ545	HIT	24+	TO-220F	20000		询价
深圳市中飞凌科技有限公司	2SJ545-E	RENESAS	26+	TO220	360000	进口原装现货	询价
深圳市宇创芯科技有限公司	2SJ545-E	RENESAS	24+	TO220	16900	原装正品现货支持实单	询价
深圳市威雅利发展有限公司	2SJ545-E	RENESAS	12+	TO220	5625	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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2SJ54规格书下载地址

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DdatasheetPDF页码索引

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2SJ54产品属性

2SJ54供应商更多...

2SJ54芯片相关品牌

2SJ54规格书下载地址

2SJ54参数引脚图相关

2SJ54数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD669AL-TO92NLB-C-TG_UTC代理商

2SD882SL-TO92B-P-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SK1485-T1

2SK1985

DdatasheetPDF页码索引