位置：首页 > IC中文资料 > 2SJ549(L)/(S)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ549(L)/(S) | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：116.92 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
TO-3 |
10000 |
|||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI |
24+ |
TO-3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HITACHI |
专业铁帽 |
TO-263 |
1 |
原装铁帽专营,代理渠道量大可订货 |
|||
日立 |
22+ |
6000 |
263 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
2SJ549(L)/(S)规格书下载地址
2SJ549(L)/(S)参数引脚图相关
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DdatasheetPDF页码索引
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