位置：首页 > IC中文资料第6242页 > 2SJ541
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ541 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ541 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ541 | Silicon P Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
2SJ541 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：107.74 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ541产品属性
- 类型
描述
- 型号
2SJ541
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
771 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HITACHI |
00+ |
TO-220 |
771 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
60000 |
||||
RENESA |
2511 |
TO-220 |
9403 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
25+ |
TO-220 |
20300 |
RENESAS/瑞萨原装特价2SJ541即刻询购立享优惠#长期有货 |
|||
HITACHI/日立 |
23+ |
TO-220 |
2035880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi/台湾微碧 |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
2SJ541规格书下载地址
2SJ541参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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