位置：首页 > IC中文资料第1185页 > 2SJ541-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ541-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
2SJ541-E产品属性
- 类型
描述
- 型号
2SJ541-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk
- 制造商
Renesas Electronics Corporation
- 功能描述
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESA |
23+ |
TO-220 |
9403 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
60000 |
全新原装现货 |
|||
RENESA |
25+ |
TO-220 |
8800 |
公司只做原装,详情请咨询 |
|||
RENESA |
24+ |
TO-220 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESA |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
760 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ541-E芯片相关品牌
2SJ541-E规格书下载地址
2SJ541-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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