位置：首页 > IC中文资料第5567页 > 2SJ546-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ546-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
P-Channel 60-V (D-S) MOSFET 文件：951.27 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ546-E产品属性
- 类型
描述
- 型号
2SJ546-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HIT(日立) |
1932+ |
TO-220F |
466 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
23+ |
TO-220 |
36688 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
HIT |
24+ |
TO-220F |
20000 |
||||
HITACHI |
24+ |
TO-220F |
27500 |
原装正品,价格最低! |
|||
RENESAS/瑞萨 |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
24+ |
TO220F |
60000 |
2SJ546-E规格书下载地址
2SJ546-E参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 2SJ530
- 2SJ529S
- 2SJ529L
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2019-10-30
DdatasheetPDF页码索引
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