位置：首页 > IC中文资料第5567页 > 2SJ548
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ548 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ548 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ548 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ548 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.44 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ548产品属性
- 类型
描述
- 型号
2SJ548
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HIT |
24+ |
TO-220F |
20000 |
||||
RENESAS |
17+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
日立 |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2SJ548规格书下载地址
2SJ548参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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