| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ544 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ544 | Silicon P Channel MOS FET * Low on-resistance R ds(on) = 0.028 Ohm typ. * Low drive current * 4V gate drive devies. * High speed switching. | RENESAS 瑞萨 | | |
2SJ544 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ544 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET * Low on-resistance R ds(on) = 0.028 Ohm typ. * Low drive current * 4V gate drive devies. * High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.01 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ544产品属性
- 类型
描述
- 封装类型：
TO-220AB
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-30
- RDS (ON)(mΩ) 最大值@4V或4.5V：
55
- RDS (ON)(mΩ) 最大值@10V或8V：
37
- Ciss (pF) 典型值：
2500
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
75
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
TO-220AB |
20000 |
||||
RENESAS/瑞萨 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
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2SJ544规格书下载地址
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DdatasheetPDF页码索引
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