型号 功能描述 生产厂家 企业 LOGO 操作
2SJ549L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:116.92 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ549L-E产品属性

  • 类型

    描述

  • 型号

    2SJ549L-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
26050
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
RENESAS
17+
TO-263
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI
23+
TO-263
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
2450+
TO-263
8850
只做原装正品假一赔十为客户做到零风险!!
24+
TO-3
10000
HITACHI
24+
TO-3
9000
只做原装正品 有挂有货 假一赔十
NEC
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS
24+
TO-263
16900
原装正品现货支持实单

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