Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon P Channel MOS FET

Description\nHigh speed power switching Features• Low on-resistance\n  RDS (on) = 0.11 Ω typ.\n• Low drive current\n• 4 V gate drive devices\n• High speed switching

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching