位置：首页 > IC中文资料第5567页 > 2SJ547
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ547 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.16 Ωtyp. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ547 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ547 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ547 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.1 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ547产品属性
- 类型
描述
- 型号
2SJ547
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HIT |
24+ |
TO-220F |
20000 |
||||
RENESAS |
17+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
26+ |
X3DFN2 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
2022+ |
TO-220FM |
12888 |
原厂代理 终端免费提供样品 |
|||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
RENESAS |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI/日立 |
23+ |
TO-220 |
36688 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SJ547规格书下载地址
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DdatasheetPDF页码索引
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