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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ542-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
2SJ542-E产品属性
- 类型
描述
- 型号
2SJ542-E
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Sanyo |
25+23+ |
Sot-23 |
34361 |
绝对原装正品全新进口深圳现货 |
|||
HITACHI/日立 |
25+ |
TO-220 |
9800 |
全新原装现货,假一赔十 |
|||
HIT |
24+ |
TO-220AB |
20000 |
||||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
R |
25+ |
TOTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
12+ |
TO220 |
5625 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SJ542-E芯片相关品牌
2SJ542-E规格书下载地址
2SJ542-E参数引脚图相关
- 500t
- 5000
- 4921
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2019-10-30
DdatasheetPDF页码索引
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