位置：首页 > IC中文资料第6242页 > 2SJ542
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ542 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ542 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ542 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ542 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：107.45 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ542产品属性
- 类型
描述
- 型号
2SJ542
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Sanyo |
25+23+ |
Sot-23 |
34361 |
绝对原装正品全新进口深圳现货 |
|||
HIT |
24+ |
TO-220AB |
20000 |
||||
NEC |
26+ |
WQFN |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI/日立 |
25+ |
TO-220 |
9800 |
全新原装现货,假一赔十 |
|||
VBSEMI |
20+ |
TO220 |
5065 |
全新 发货1-2天 |
2SJ542规格书下载地址
2SJ542参数引脚图相关
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- 2SJ535
- 2SJ534-E
- 2SJ534
- 2SJ533-E
- 2SJ533
- 2SJ532-E
- 2SJ532
- 2SJ531-E
- 2SJ531
- 2SJ530S
- 2SJ530L
- 2SJ530
- 2SJ529S
- 2SJ529L
- 2SJ529
- 2SJ528S
- 2SJ528L
- 2SJ528
- 2SJ527S
2SJ542数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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