| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ542 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ542 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ542 | Silicon P Channel MOS FET High Speed Power Switching • Low on-resistance\n RDS(on) = 0.050Ω typ.\n• Low drive current.\n• 4V gate drive devices.\n• High speed switching. ; | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ542 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：107.45 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ542产品属性
- 类型
描述
- 封装类型：
TO-220AB
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-18
- RDS (ON)(mΩ) 最大值@4V或4.5V：
110
- RDS (ON)(mΩ) 最大值@10V或8V：
65
- Ciss (pF) 典型值：
1300
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
60
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
TO-220AB |
20000 |
||||
VBSEMI |
20+ |
TO220 |
5065 |
全新 发货1-2天 |
|||
NEC |
26+ |
WQFN |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
VBSEMI/台湾微碧 |
25+ |
TO220 |
90000 |
全新原装现货 |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ542规格书下载地址
2SJ542参数引脚图相关
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- 2SJ529
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- 2SJ528
- 2SJ527S
2SJ542数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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