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N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET™technology, withanewgatestructure.Th

Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes

Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes

N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructuretha

Automotive-grade N-channel 100 V, 5 m typ., 107 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructuretha

Automotive-grade N-channel 40 V, 2.5 m typ., 119 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features •AEC-Q101qualified •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness •Wettableflankpackage Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhanced

N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™ M2enhan

N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description ThisdeviceisanN-channelPowerMOSFET basedonMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhighpo

600W Outdoor UPS Systems

Features •Weatherproof(IP65),UVresistant,outdoorenclosures •PoweredfromACmainspowerand/orSolar •Interiorspaceforcustomerelectronics •WallorPoleMounting •IsolatesCustomerEquipmentfromPowerLineSurges •HighQualityAGMSealedLeadAcidBatteries •Advancedbatterycharge

N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features •MSL1grade •175°Coperatingtemperature •100avalanchetested Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF8technologyfeaturingan enhancedtrenchgatestructure. Itensuresverylowon-stateresistancewhilereducing

High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrench

N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET

Description TheSTL12N3LLH5isa30VN-channel STripFET™V.ThisPowerMOSFETtechnologyis amongthelatestimprovements,whichhavebeen especiallytailoredtoachieveverylowon-state resistanceprovidingalsooneofthebest-in-class figureofmerit(FOM). Features ■RDS(on)*Qgi

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

Very low intrinsic capacitance

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

Low gate input resistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

N-channel 30 V - 0.0014 廓 - 35 A - PowerFLAT??(6x5) STripFET??V Power MOSFET

Description ThisSTripFET™VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classFOM. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Hig

N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistance

N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

N-channel 600 V, 0.30 typ., 8 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

N-channel 600 V, 300 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features •AEC-Q101qualified •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss •Logiclevel •Wettableflankpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingtheSTripFET™H6 technologywithanewtrenc

N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithanenhancedtrench

N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET

Features ■Exceptionaldv/dtcapability ■Lowgatecharge ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process hasspecificallybeendesignedtominimizeinput capacitanceandgatec

N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

GeneralFeatures ■WORLDWIDELOWESTGATECHARGE ■TYPICALRDS(on)=0.088Ω ■IMPROVEDDIE-TO-FOOTPRINTRATIO ■VERYLOWPROFILEPACKAGE(1mmMAX) ■VERYLOWTHERMALRESISTANCE ■LOWGATERESISTANCE ■LOWINPUTCAPACITANCE ■HIGHdv/dtandAVALANCHECAPABILITIES DESCRIPTION This200VMO

Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features Designedforautomotiveapplicationsand AEC-Q101qualified AmongthelowestRDS(on)onthemarket Excellentfigureofmerit(FoM) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Description ThisN-channelPowerMOSFETutilizes

Automotive N-channel 40 V, 1.35 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features •AEC-Q101qualified •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness •Wettableflankpackage Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced t

N-channel 60 V, 1.4 mΩ typ., 250 A STripFET™ F7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6

Features AmongthelowestRDS(on)onthemarket Excellentfigureofmerit(FoM) EmbeddedSchottkydiode LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFET™F7technol

Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced

N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

N-channel 600 V, 220 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

Low gate input resistance

Description ThisdeviceisanN-channelPowerMOSFETbasedontheMDmeshM5innovativeverticalprocesstechnologycombinedwiththewell-knownPowerMESHhorizontallayout.Theresultingproductoffersextremelylowon-resistance,makingitparticularlysuitableforapplicationsrequiringhighpo

N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT??LOW GATE CHARGE STripFET??II MOSFET

DESCRIPTION ThisapplicationspecificPowerMOSFETisthesecondgenerationofSTMicroelectronisuniqueSTripFET™technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT™packageallowsasignificantreductioninboardspacewithoutcompro

N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features Extremelylowgatecharge Excellentoutputcapacitance(Coss)profile 100avalanchetested Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandimprovedvertical structure,thedevices

Very low gate charge

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingtheSTripFET™H6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETexhibitsverylowRDS(on)inallpackages. Features •Verylowon-resistanceRDS(on) •Verylowgatecharge •Highavalancheruggednes

N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh™DM2fastrecovery diodeseries.

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

N-CHANNEL 150V - 0.045 W - 27A PowerFLAT LOW GATE CHARGE STripFET MOSFET

■TYPICALRDS(on)=0.045Ω ■IMPROVEDDIE-TO-FOOTPRINTRATIO ■VERYLOWPROFILEPACKAGE(1mmMAX) ■VERYLOWTHERMALRESISTANCE ■VERYLOWGATECHARGE DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronics uniqueSTripFET™processhasspecificallybeen designedtominimizeinpu

Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features DesignedforautomotiveapplicationsandAEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Applications Switchingapplications Descripti

N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

N-channel 600 V, 0.140 typ., 19 A MDmeshTM M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features Extremelylowgatecharge Excellentoutputcapacitance(COSS)profile 100avalanchetested Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedevi

N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET™”technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT™packageallowsasignificantreductioninboardspacewithoutcompromisingperformance

N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET™”technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT™packageallowsasignificantreductioninboardspacewithoutcompromisingperformance

Switching applications

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features MSL1grade 175°Coperatingtemperature 100avalanchetested Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF8technologyfeaturingan enhancedtrenchgatestructure. ensuresverylowon-stateresistancewhilereducinginternalc

Integrated Circuit DC Motor Driver