General Features

■ WORLDWIDE LOWEST GATE CHARGE

■ TYPICAL RDS(on) = 0.088Ω

■ IMPROVED DIE-TO-FOOTPRINT RATIO

■ VERY LOW PROFILE PACKAGE (1mm MAX)

■ VERY LOW THERMAL RESISTANCE

■ LOW GATE RESISTANCE

■ LOW INPUT CAPACITANCE

■ HIGH dv/dt and AVALANCHE CAPABILITIES

DESCRIPTION

This 200V MOSFET with a new advanced layout

brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary

switch in isolated DC-DC converters for Telecom

and Computer applications.Used in combination

with secondary-side low-voltage STripFETTM products, it contributes to reducing losses and boosting

efficiency.The new PowerFLAT™ package allows

a significant reduction in board space without compromising performance.

APPLICATIONS

The MDmeshTM family is very suitable for increasing power density allowing system miniaturization

and higher efficiencies