N-channel600V,0.30typ.,8AMDmesh™M6PowerMOSFETinaPowerFLAT™5x6HVpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

封装/外壳：8-PowerVDFN 包装：管件 描述：MOSFET N-CH 600V POWERFLAT HV 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel600V,0.260Ωtyp.,12AMDmeshM6PowerMOSFETinaDPAKpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

N-channel600V,0.26typ.,12AMDmeshTMM6PowerMOSFETinaTO-220FPpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof