DESCRIPTION

This application specific Power MOSFET is the second generation of STMicroelectronis unique STripFET™ technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.

■ TYPICAL RDS(on) = 0.055 Ω

■ IMPROVED DIE-TO-FOOTPRINT RATIO

■ VERY LOW PROFILE PACKAGE (1mm MAX)

■ VERY LOW THERMAL RESISTANCE

■ VERY LOW GATE CHARGE

APPLICATIONS

■ HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS

■ TELECOM AND AUTOMOTIVE