Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Very high switching speed

■ Large RBSOA

■ Integrated antiparallel collector-emitter diode

Applications

■ Electronic ballast for fluorescent lighting

■ Flyback and forward single transistor low power converters