Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Features

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications