Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

• Outstanding RDS(on)*area

• Extremely large avalanche performance

• Gate charge minimized

• Very low intrinsic capacitance

• 100 avalanche tested

Applications

• Switching applications