Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications