| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STL26N65DM2 | N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. | STMICROELECTRONICS 意法半导体 | ||
STL26N65DM2 | N沟道650 V、0.182 Ohm典型值、20 A MDmesh DM2功率MOSFET,PowerFLAT 8x8 HV封装 This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | ||
N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220FP package Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. | STMICROELECTRONICS 意法半导体 | |||
N-channel 650 V, 0.156 Ω typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220 package Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. | STMICROELECTRONICS 意法半导体 | |||
N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-247 package Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. | STMICROELECTRONICS 意法半导体 |
STL26N65DM2产品属性
- 类型
描述
- Package:
PowerFLAT 8x8 HV
- Grade:
Industrial
- VDSS(V):
650
- RDS(on)_max(@ VGS=10V)(Ω):
0.206
- Drain Current (Dc)_max(A):
20
- PTOT_max(W):
140
- Qg_typ(nC):
35.5
- Features:
Fast recovery diode
- Reverse Recovery Time_typ(ns):
100
- Qrr_typ(nC):
365
- Peak Reverse Current_nom(A):
7.3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
25+ |
N/A |
7734 |
样件支持,可原厂排单订货! |
|||
ST(意法半导体) |
25+ |
N/A |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TE |
25+ |
100 |
原厂现货渠道 |
||||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST/意法半导体 |
26+ |
原厂封装 |
10280 |
||||
ST/意法 |
23+ |
QPF |
50000 |
全新原装正品现货,支持订货 |
|||
TE |
2026+ |
SMT |
300000 |
济德96T0-29792替代STL009L2H |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
||||
ADI |
23+ |
QFP |
8000 |
只做原装现货 |
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STL26N65DM2规格书下载地址
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STL26N65DM2数据表相关新闻
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瀚佳科技(深圳)有限公司 专业进口电子元器件代理商
2019-9-5
DdatasheetPDF页码索引
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