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型号 功能描述 生产厂家 企业 LOGO 操作
STL26N65DM2

N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

STMICROELECTRONICS

意法半导体

STL26N65DM2

N沟道650 V、0.182 Ohm典型值、20 A MDmesh DM2功率MOSFET,PowerFLAT 8x8 HV封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.156 Ω typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

STMICROELECTRONICS

意法半导体

STL26N65DM2产品属性

  • 类型

    描述

  • Package:

    PowerFLAT 8x8 HV

  • Grade:

    Industrial

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.206

  • Drain Current (Dc)_max(A):

    20

  • PTOT_max(W):

    140

  • Qg_typ(nC):

    35.5

  • Features:

    Fast recovery diode

  • Reverse Recovery Time_typ(ns):

    100

  • Qrr_typ(nC):

    365

  • Peak Reverse Current_nom(A):

    7.3

更新时间:2026-5-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
25+
N/A
7734
样件支持,可原厂排单订货!
ST(意法半导体)
25+
N/A
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
TE
25+
100
原厂现货渠道
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
ST/意法半导体
26+
原厂封装
10280
ST/意法
23+
QPF
50000
全新原装正品现货,支持订货
TE
2026+
SMT
300000
济德96T0-29792替代STL009L2H
ST/意法半导体
25+
原厂封装
10280
ADI
23+
QFP
8000
只做原装现货

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