600W Outdoor UPS Systems

Features •Weatherproof (IP65), UV resistant, outdoor enclosures •Powered from AC mains power and/or Solar •Interior space for customer electronics •Wall or Pole Mounting •Isolates Customer Equipment from Power Line Surges •High Quality AGM Sealed Lead Acid Batteries •Advanced battery charge

N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET

Description The STL12N3LLH5 is a 30 V N-channel STripFET™ V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg i

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

Very low intrinsic capacitance

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

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Wettable flank package

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High avalanche ruggedness

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High avalanche ruggedness

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N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET

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Low spread of dynamic parameters

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Low spread of dynamic parameters

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封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-channel 600 V, 0.400 廓 typ., 6.5 A MDmesh??M2 Power MOSFET in a PowerFLAT 5x6 HV package

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Zener-protected

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P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 package

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-100V P-Channel Enhancement Mode MOSFET

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2W Single Output Surface

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2W Single Output Surface

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2W Single Output Surface

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2W Single Output Surface

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2W Single Output Surface

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