Features

 Among the lowest RDS(on) on the market

 Excellent FoM (figure of merit)

 Low Crss/Ciss ratio for EMI immunity

 High avalanche ruggedness

Applications

 Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.