Features

 AEC-Q101 qualified

 Among the lowest RDS(on) on the market

 Excellent FoM (figure of merit)

 Low Crss/Ciss ratio for EMI immunity

 High avalanche ruggedness

 Wettable flank package

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low onstate

resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Applications

 DC-DC converter for H.E.V.

(hybrid electric vehicle)