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NE5550价格

参考价格：￥896.0017

型号：NE5550234-EV04-A 品牌：CEL 备注：这里有NE5550多少钱，2025年最近7天走势，今日出价，今日竞价，NE5550批发/采购报价，NE5550行情走势销售排行榜，NE5550报价。

型号	功能描述	生产厂家企业	LOGO
NE5550234	Silicon Power MOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MH	RENESAS 瑞萨	RENESAS
NE5550234-T1	Silicon Power MOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MH	RENESAS 瑞萨	RENESAS
NE5550279A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin	RENESAS 瑞萨	RENESAS
NE5550279A-T1	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin	RENESAS 瑞萨	RENESAS
NE5550279A-T1A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin	RENESAS 瑞萨	RENESAS
NE5550779A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550779A-A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550779A-T1	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550779A-T1A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550779A-T1-A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550779A-T1A-A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f	RENESAS 瑞萨	RENESAS
NE5550979A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =	RENESAS 瑞萨	RENESAS
NE5550979A-T1	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =	RENESAS 瑞萨	RENESAS
NE5550979A-T1A	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =	RENESAS 瑞萨	RENESAS
NE5550234	Silicon Power MOS FET 文件：1.34104 Mbytes Page：16 Pages	RENESAS 瑞萨	RENESAS
NE5550234	Silicon Power MOS FET 文件：2.501 Mbytes Page：15 Pages	CEL	CEL
NE5550234_13	Silicon Power MOS FET 文件：1.34104 Mbytes Page：16 Pages	RENESAS 瑞萨	RENESAS
NE5550234-A	RF & Microwave device 文件：137.58 Kbytes Page：2 Pages	RENESAS 瑞萨	RENESAS
NE5550234-AZ	Silicon Power MOS FET 文件：2.501 Mbytes Page：15 Pages	CEL	CEL
NE5550234-AZ	Silicon Power MOS FET 文件：1.34104 Mbytes Page：16 Pages	RENESAS 瑞萨	RENESAS
NE5550234-EV04-A	包装：盒描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器射频评估和开发套件，开发板	CEL	CEL
NE5550234-EV09-A	包装：盒描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器射频评估和开发套件，开发板	CEL	CEL
NE5550234-T1	Silicon Power MOS FET 文件：2.501 Mbytes Page：15 Pages	CEL	CEL
NE5550234-T1	Silicon Power MOS FET 文件：1.34104 Mbytes Page：16 Pages	RENESAS 瑞萨	RENESAS
NE5550234-T1-AZ	Silicon Power MOS FET 文件：1.34104 Mbytes Page：16 Pages	RENESAS 瑞萨	RENESAS
NE5550234-T1-AZ	Silicon Power MOS FET 文件：2.501 Mbytes Page：15 Pages	CEL	CEL
NE5550279A	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550279A	Silicon Power LDMOS FET	CEL	CEL
NE5550279A	Silicon Power LDMOS FET	RENESAS 瑞萨	RENESAS
NE5550279A-A	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550279A-T1	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550279A-T1A	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550279A-T1-A	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550279A-T1A-A	Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages	CEL	CEL
NE5550779A	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550779A	Silicon Power LDMOS FET	RENESAS 瑞萨	RENESAS
NE5550779A-A	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550779A-T1	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550779A-T1A	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550779A-T1-A	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550779A-T1A-A	Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages	CEL	CEL
NE5550979A	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
NE5550979A	Silicon Power LDMOS FET 文件：784.88 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A_13	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A_15	Silicon Power LDMOS FET 文件：784.88 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-A	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-A	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
NE5550979A-T1	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
NE5550979A-T1	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1	Silicon Power LDMOS FET 文件：784.88 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1A	Silicon Power LDMOS FET 文件：784.88 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1A	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1A	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
NE5550979A-T1-A	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
NE5550979A-T1-A	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1A-A	Silicon Power LDMOS FET 文件：790.36 Kbytes Page：13 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1A-A	Silicon Power LDMOS FET 文件：1.15258 Mbytes Page：12 Pages	CEL	CEL
5550	Cold Shrink] Rubber Splicing Kits 1. Product Description 3M] 5550 Series Cold Shrink] Rubber Splicing Kits are designed for splicing 5/8 kV shielded and non-shielded, solid dielectric, power cables. Each kit contains all the materials (except connectors) required to construct 3 single-conductor splices on tape shield, wire sh	3M	3M
5550	HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE	SEMTECH 先之科	SEMTECH

NE5550产品属性

类型
描述
型号
NE5550
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon Power MOS FET

NE5550供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	NE5550979A-T1-A	RENESAS/瑞萨	24+	NA/	4095	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	NE5550779A-T1A-A	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
千层芯半导体(深圳)有限公司	NE5550979A-T1-A	RENESAS	24+	NA	30617	一级代理全新原装热卖	询价
深圳市赛美科科技有限公司	NE5550979A-T1-A	RENESAS		79A	185600	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市英博尔电子有限公司	NE5550779A-T1A-A	Renesas	2年内	N/A	16000	英博尔原装优质现货订货渠道商	询价
深圳市星宇佳科技有限公司	NE5550779A-T1A-A	RENESAS(瑞萨)/IDT	20+	-	5000		询价
深圳市科恒伟业电子有限公司	NE5550979A-T1-A	RENESAS/瑞萨	2450+	79A	8850	只做原装正品假一赔十为客户做到零风险!!	询价
贸泽芯城（深圳）电子科技有限公司	NE5550779A-T1A-A	RENESAS/瑞萨	23+		26261	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市勤思达科技有限公司	NE5550979A-T1-A	RENESAS	24+	CAN	5000	全新原装正品,现货销售	询价
深圳市能元时代电子有限公司	NE5550979A-T1-A	RENESAS	23+	高频管	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

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DdatasheetPDF页码索引

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NE5550价格

NE5550产品属性

NE5550供应商更多...

NE5550芯片相关品牌

NE5550规格书下载地址

NE5550参数引脚图相关

NE5550数据表相关新闻

NE555DR

NE5534DR放大器芯片

NE555DR公司全新现货供应

NE5534P公司全新现货供应

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NE555DR.NE555P.NE555

DdatasheetPDF页码索引