NE5550979A价格

参考价格:¥45.2949

型号:NE5550979A-A 品牌:CEL 备注:这里有NE5550979A多少钱,2025年最近7天走势,今日出价,今日竞价,NE5550979A批发/采购报价,NE5550979A行情走势销售排行榜,NE5550979A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NE5550979A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =

RENESAS

瑞萨

NE5550979A

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

NE5550979A

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

NE5550979A

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =

RENESAS

瑞萨

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

包装:盒 描述:EVAL BOARD NE5550979A 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Labs

包装:盒 描述:EVAL BOARD NE5550979A 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

NE5550979A产品属性

  • 类型

    描述

  • 型号

    NE5550979A

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    SILICON MEDIUM POWER LDMOSFET ROHS DIRECTIVE COMPLIANT - Product that comes on tape, but is not reeled

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC FET LDMOS 30V 3.0A 79A-PKG

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    Pout 39.5dBm PAE 66% Gain 22dB

更新时间:2025-8-10 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
1690
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS
24+
CAN
5000
全新原装正品,现货销售
RENESAS
24+
高频管
16900
原装正品现货支持实单
RENESAS
SOP
7880
原盒原包装现货原装假一罚十价优
RENESAS
24+
NA
30617
一级代理全新原装热卖
RENESAS
23+
高频管
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
1010+
CAN
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
2023+
CAN
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
20+
高频管
2390
进口原装现货,假一赔十

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