型号 功能描述 生产厂家 企业 LOGO 操作
NE5550979A-T1A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =

RENESAS

瑞萨

NE5550979A-T1A

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

NE5550979A-T1A

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

NE5550979A-T1A

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f =

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

Silicon Power LDMOS FET

文件:784.88 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:790.36 Kbytes Page:13 Pages

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:1.15258 Mbytes Page:12 Pages

CEL

更新时间:2025-9-26 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
S/PHI
6000
面议
19
DIP
TI/TEXAS
23+
DIP8SOP8
8931
RENESAS
24+
CAN
5000
全新原装正品,现货销售
RENESAS
24+
NA
30617
一级代理全新原装热卖
RENESAS/瑞萨
2450+
79A
8850
只做原装正品假一赔十为客户做到零风险!!
TI/德州仪器
23+
SOP8
15000
全新原装现货,价格优势
RENESAS
NA
6784
正品原装--自家现货-实单可谈
RENESAS/瑞萨
24+
79A
27950
郑重承诺只做原装进口现货
RENESAS
23+
高频管
12800
##公司主营品牌长期供应100%原装现货可含税提供技术

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