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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE5550779A-T1 | Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 |   | |
NE5550779A-T1 | Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Labs | | |
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Labs | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Labs | | ||
封装/外壳：4-SMD，扁平引线 包装：托盘 描述：FET RF 30V 900MHZ 79A-PKG 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Labs | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Labs | |
NE5550779A-T1产品属性
- 类型
描述
- 型号
NE5550779A-T1
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
SILICON POWER LDMOS FET ROHS COMPLIANT - Tape and Reel
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
IC FET LDMOS 30V 2.1A 79A-PKG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4095 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
21+ |
79A |
10000 |
原装现货假一罚十 |
|||
RENESAS |
1010+ |
CAN |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
22+23+ |
CAN |
8000 |
新到现货，只做原装进口 |
|||
Renesas |
2年内 |
N/A |
16000 |
英博尔原装优质现货订货渠道商 |
|||
RENESAS(瑞萨)/IDT |
20+ |
- |
5000 |
||||
RENESAS |
24+ |
NA |
30617 |
一级代理全新原装热卖 |
|||
RENESAS/瑞萨 |
23+ |
26261 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
RENESAS |
NA |
6784 |
正品原装--自家现货-实单可谈 |
NE5550779A-T1规格书下载地址
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