位置：首页 > IC中文资料第411页 > NE5550779A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE5550779A | Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 |   | |
NE5550779A | Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | | |
NE5550779A | Silicon Power LDMOS FET | CEL | | |
NE5550779A | Silicon Power LDMOS FET | RENESAS 瑞萨 | | |
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | | ||
包装：盒 描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL | | ||
包装：盒 描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | | ||
Silicon Power LDMOS FET 文件：3.56692 Mbytes Page：16 Pages | CEL | |
NE5550779A产品属性
- 类型
描述
- 型号
NE5550779A
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
SILICON POWER LDMOS FET ROHS COMPLIANT - Product that comes on tape, but is not reeled
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
IC FET LDMOS 30V 0.6A 79A-PKG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
79A |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CEL |
22+ |
79A |
9000 |
原厂渠道,现货配单 |
|||
RENESAS |
22+ |
高频管 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
NA |
6784 |
正品原装--自家现货-实单可谈 |
||||
RENESAS/瑞萨 |
24+ |
79A |
27950 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
25+ |
79A |
10000 |
原装现货假一罚十 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
26+ |
CAN |
12000 |
原装，正品 |
|||
RENESAS |
1923+ |
SOP |
7880 |
原盒原包装现货原装假一罚十价优 |
NE5550779A规格书下载地址
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