位置：首页 > IC中文资料 > NE5550279A-T1A-A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE5550279A-T1A-A | Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages | CEL California Eastern Labs |   | |
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages | CEL California Eastern Labs | | ||
Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin | RENESAS 瑞萨 | | ||
Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages | CEL California Eastern Labs | | ||
Silicon Power LDMOS FET 文件：772.41 Kbytes Page：8 Pages | CEL California Eastern Labs | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
22+ |
79A |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
23+ |
79A |
89630 |
当天发货全新原装现货 |
|||
RENESAS |
NA |
6784 |
正品原装--自家现货-实单可谈 |
||||
RENESAS/瑞萨 |
21+ |
79A |
10000 |
原装现货假一罚十 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
1923+ |
SOP |
7880 |
原盒原包装现货原装假一罚十价优 |
|||
RENESAS/瑞萨 |
23+ |
79A |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS(瑞萨)/IDT |
20+ |
- |
5000 |
||||
Renesas |
2年内 |
N/A |
16000 |
英博尔原装优质现货订货渠道商 |
|||
RENESAS |
79A |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
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