型号 功能描述 生产厂家 企业 LOGO 操作
NE5550779A-T1-A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

NE5550779A-T1-A

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

NE5550779A-T1-A

封装/外壳:4-SMD,扁平引线 包装:托盘 描述:FET RF 30V 900MHZ 79A-PKG 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

NE5550779A-T1-A产品属性

  • 类型

    描述

  • 型号

    NE5550779A-T1-A

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    SILICON POWER LDMOS FET ROHS COMPLIANT - Tape and Reel

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC FET LDMOS 30V 2.1A 79A-PKG

更新时间:2026-2-2 13:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CEL
22+
79A
9000
原厂渠道,现货配单
RENESAS/瑞萨
24+
79A
60000
全新原装现货
RENESAS/瑞萨
24+
79A
27950
郑重承诺只做原装进口现货
RENESAS
20+
高频管
2390
进口原装现货,假一赔十
RENESAS
23+
CAN
50000
全新原装正品现货,支持订货
Renesas
2年内
N/A
16000
英博尔原装优质现货订货渠道商
RENESAS
24+
CAN
5000
全新原装正品,现货销售
RENESAS
2511
高频管
2390
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS
NA
6784
正品原装--自家现货-实单可谈
RENESAS
24+
CAN
8000
新到现货,只做全新原装正品

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