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NE5550779A-T1A-A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

NE5550779A-T1A-A

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

更新时间:2026-2-2 19:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
1010+
CAN
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
22+
高频管
20000
公司只做原装 品质保障
RENESAS
24+
CAN
8000
新到现货,只做全新原装正品
RENESAS(瑞萨)/IDT
20+
-
5000
Renesas
2年内
N/A
16000
英博尔原装优质现货订货渠道商
TI/德州仪器
25+
SOP8
15000
全新原装现货,价格优势
RENESAS
79A
185600
一级代理 原装正品假一罚十价格优势长期供货
TI/TEXAS
26+
DIP8SOP8
8931
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS/瑞萨
2450+
79A
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
NA
6784
正品原装--自家现货-实单可谈

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