型号 功能描述 生产厂家 企业 LOGO 操作
NE5550779A-T1A-A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

NE5550779A-T1A-A

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

更新时间:2026-2-3 14:36:00
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22+
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9000
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25+
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23+
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12800
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2023+
CAN
8800
正品渠道现货 终端可提供BOM表配单。

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